C5470 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

C5470

Silicon NPN Triple Diffused Character Display Horizontal Deflection Output

Hitachi -> Renesas Electronics 

2SC5470

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at Tc = 25°C

Symbol

VCBO

VCEO

VEBO

IC

ic(peak)

P Note1

C

Tj

Tstg

Ratings

Unit

1500

V

700

V

6

V

20

A

40

A

150

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to emitter breakdown

V(BR)CEO

700

voltage

Emitter to base breakdown voltage V(BR)EBO

6

Collector cutoff current

I CES

—

DC current transfer ratio

hFE1

10

DC current transfer ratio

hFE2

3.5

Collector to emitter saturation

VCE(sat)

—

voltage

Base to emitter saturation voltage VBE(sat)

—

Fall time

tf

—

Fall time

tf

—

Typ

—

—

—

—

—

—

—

0.2

0.15

Max

—

—

500

40

6.5

5

1.5

0.4

—

Unit

V

V

µA

V

V

µs

µs

Test Conditions

IC = 10mA, RBE = •

IE = 10mA, IC = 0

VCE = 1500V, RBE = 0

VCE = 5 V, IC = 1A

VCE = 5 V, IC = 10A

IC = 12A, IB = 4A

IC = 12A, IB = 4A

ICP = 8A, IB1= 3A

fH = 31.5kHz

ICP = 8A, IB1= 2A

fH = 64kHz

2

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