C5008 Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание

производитель

C5008

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

Renesas Electronics 

2SC5008

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain Bandwidth Product

Feed-back Capacitance

Insertion Power Gain

Noise Figure

SYMBOL

ICBO

IEBO

hFE

fT

Cre

|S21e|2

NF

MIN.

80

5.5

5.5

TYP.

8.0

0.3

7.5

1.9

MAX.

1.0

1.0

160

0.7

3.2

UNIT

µA

µA

GHz

pF

dB

dB

TEST CONDITIONS

VCB = 10 V, IE = 0

VEB = 1 V, IC = 0

VCE = 3 V, IC = 5 mA*1

VCE = 3 V, IC = 5 mA

VCB = 3 V, IE = 0, f = 1 MHz*2

VCE = 3 V, IC = 5 mA, f = 2 GHz

VCE = 3 V, IC = 5 mA, f = 2 GHz

*1 Pulse Measurement PW ≤ 350 µs, Duty Cycle ≤ 2 %

*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance

bridge.

hFE Classification

RANK

Marking

hFE

FB

44

80 to 160

2

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