2SC4992 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SC4992

Silicon NPN Bipolar Transistor

Hitachi -> Renesas Electronics 

2SC4992

Power gain vs. collector current

20

VCE = 5V

f = 900 MHz

16

12

8

4

0

12

5 10 20

50

Collector Current I C (mA)

Noise figure vs. collector current

5

VCE = 5V

f = 900MHz

4

3

2

1

0

1

2

5 10 20

50

Collector Current I C (mA)

S21 parameter vs. collector current

20

VCE = 5V

f = 1 GHz

16

12

8

4

0

12

5 10 20

50

Collector Current I C (mA)

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