2SC5087R Просмотр технического описания (PDF) - Toshiba
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2SC5087R Datasheet PDF : 3 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5087R
2SC5087R
VHF to UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain.
• NF = 1.1dB, |S21e|2 = 13.5dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
20
V
12
V
3
V
40
mA
80
mA
150
mW
125
°C
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
Unit: mm
SMQ
1.Base(B)
2.Emitter1(E1)
3.Collector(C)
4.Emitter(E2)
JEDEC
―
JEITA
―
TOSHIBA
―
Weight: 12 mg (typ.)
Characteristic
Transition frequency
Insertion gain
Noise figure
Symbol
Condition
fT
⎪S21e⎪2 (1)
⎪S21e⎪2 (2)
NF
VCE = 10 V, IC = 30 mA
VCE = 5 V, IC = 20 mA, f = 1 GHz
VCE = 10 V, IC = 30 mA, f = 1 GHz
VCE = 10 V, IC = 7 mA, f = 1 GHz
Electrical Characteristics (Ta = 25°C)
Min Typ. Max Unit
6
8
⎯ GHz
⎯ 12.5 ⎯
11 13.5 ⎯
dB
⎯
1.1
2
Characteristic
Symbol
Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 10 V, IE = 0
⎯
⎯
1
μA
VEB = 1 V, IC = 0
⎯
⎯
1
μA
VCE = 10 V, IC = 20 mA
120
⎯
240
⎯
⎯
1.1
1.6
pF
VCB = 10 V, IE = 0, f = 1 MHz(Note 1)
⎯ 0.65
1
pF
Note 1: Cre is measured with a three-terminal method using a capacitance bridge.
Start of commercial production
2005-05
1
2014-03-01
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