2SC4423 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SC4423

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC4423

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 400V(Min)

·High Switching Speed

·Wide Area of Safe Operation

APPLICATIONS

·Designed for switching regulator and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

500

V

VCEO Collector-Emitter Voltage

400

V

VEBO Emitter-Base voltage

7

V

IC

Collector Current-Continuous

12

A

ICM

Collector Current-Peak

25

A

IB

Base Current-Continuous

Collector Power Dissipation

@ TC=25℃

PC

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

4

A

55

W

3

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc Website：www.iscsemi.cn

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