2SC3322 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге

Компоненты Описание

производитель

2SC3322

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ,L=100mH;RBE=∞

V(BR)EBO Base-emitter breakdown voltage

IE=10mA; IC=0

VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A

VBE sat Base-emitter saturation voltage

IC=1.5A; IB=0.3A

ICBO

Collector cut-off current

ICEO

Collector cut-off current

VCB=750V; IE=0

VCE=650V; RBE=∞

hFE-1

DC current gain

IC=0.5A ; VCE=5V

hFE-2

DC current gain

IC=3A ; VCE=5V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=3A ; VCC≈250V

IB1=0.6A; IB2=-1.5A

Product Specification

2SC3322

MIN TYP. MAX UNIT

800

V

7

V

1.0

V

1.5

V

100 μA

100 μA

15

7

1.0

μs

3.0

μs

1.0

μs

2

Share Link: