2SC3164 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

2SC3164

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0

VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A

VBEsat Base-emitter saturation voltage

IC=5A ;IB=1A

ICBO

Collector cut-off current

ICEO

Collector cut-off current

At rated voltage

IEBO

Emitter cut-off current

At rated voltage

hFE-1

DC current gain

IC=5A ; VCE=2V

hFE-2

DC current gain

IC=1mA ; VCE=2V

fT

Transition frequency

IC=0.6A ; VCE=10V

Product Specification

2SC3164

MIN TYP. MAX UNIT

400

V

1.0

V

1.5

V

0.1

mA

0.1

mA

15

5

20

MHz

2

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