2SC2794 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SC2794

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A

VBE

Base-emitter on voltage

IC=1A ; VCE=2V

ICBO

Collector cut-off current

VCB=60V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=150mA ; VCE=2V

hFE-2

DC current gain

IC=1A ; VCE=2V

fT

Transition frequency

IC=100mA; VCE=5V

Product Specification

2SC2794

MIN TYP. MAX UNIT

60

V

0.6

V

1.3

V

100 μA

1

mA

50

25

40

MHz

2

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