2SC2899 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SC2899

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; RBE=∞,L=100mH

V(BR)EBO Emitter-base breakdown voltage

IE=10mA; IC=0

VCEsat Collector-emitter saturation voltage IC=250mA; IB=50m A

VBEsat Base-emitter saturation voltage

IC=250mA ;IB=50m A

hFE-1

DC current gain

IC=250mA ; VCE=5V

hFE-2

DC current gain

IC=500mA ; VCE=5V

ICBO

Collector cut-off current

ICEO

Collector cut-off current

VCB=400V; IE=0

VCE=350V; RBE=∞

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=0.5A; IB1=-IB2=0.1A

VCC≈150V

Product Specification

2SC2899

MIN TYP. MAX UNIT

400

V

10

V

1.0

V

1.5

V

15

7

20 μA

50 μA

1.0 μs

2.0 μs

1.0 μs

2

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