2SC1905 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SC1905

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC1905

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=100μA ; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=100μA ; IC=0

VCEsat Collector-emitter saturation voltage IC=50mA; IB=5mA

ICBO

Collector cut-off current

VCB=200V ;IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=10m A ; VCE=10V

fT

Transition frequency

IC=10m A ; VCE=30V

COB

Output capacitance

IE=0 ; VCB=50V; f=1MHz

tstg

Storage time

IC=100mA; IB1=10mA; IB2=0

MIN TYP. MAX UNIT

300

V

350

V

7.5

V

1.0

V

2

μA

2

μA

40

250

50

MHz

4.5 pF

5

7.5 μs

2

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