2SB774 Просмотр технического описания (PDF) - Panasonic Corporation
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2SB774 Datasheet PDF : 3 Pages
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Transistors
2SB0774 (2SB774)
Silicon PNP epitaxial planar type
For low-frequency amplification
■ Features
• High emitter-base voltage (Collector open) VEBO
• Protective diodes and resistances between emitter and base can be
omitted.
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−30
V
Collector-emitter voltage (Base open) VCEO
−25
V
Emitter-base voltage (Collector open) VEBO
−15
V
Collector current
IC
−100
mA
Peak collector current
ICP
−200
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common-emitter reverse transfer)
VCBO
VCEO
VEBO
ICBO
ICEO
hFE1 *
hFE2
VCE(sat)
fT
Cob
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −10 V, IE = 0
VCE = −20 V, IB = 0
VCE = −10 V, IC = −2 mA
VCE = −2 V, IC = −100 mA
IC = −100 mA, IB = −10 mA
VCB = −10 V, IE = 2 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
−30
V
−25
V
−15
V
−1
µA
−100 µA
210
460
90
− 0.5 V
150
MHz
4
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
hFE1
210 to 340 290 to 460
Publication date: March 2003
Note) The part number in the parenthesis shows conventional part number.
SJC00053BED
1
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