2SB566 Просмотр технического описания (PDF) - Renesas Electronics
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2SB566 Datasheet PDF : 7 Pages
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2SB566(K), 2SB566A(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
Ratings
2SB566(K)
–70
–50
–5
–4
–8
40
150
–55 to +150
2SB566A(K) Unit
–70
V
–60
V
–5
V
–4
A
–8
A
40
W
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SB566(K)
2SB566A(K)
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–70 —
—
–70 —
—V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–50 —
—
–60 —
—V
IC = –50 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
–5
—
—
–5
—
—V
IE = –10 µA, IC = 0
Collector cutoff current ICBO
— — –1 — — –1 µA VCB = –50 V, IE = 0
DC current tarnsfer ratio hFE1*1
60 — 200 60 — 200
VCE = –4 V, IC = –1 A
hFE2
35 — — 35 — —
VCE = –4 V, IC = –0.1 A
Collector to emitter
saturation voltage
VCE(sat)
—
—
–1.0 —
—
–1.0 V
IC = –2 A, IB = –0.2 A
Base to emitter
saturation voltage
VBE(sat)
— — –1.2 — — –1.2 V
IC = –2 A, IB = –0.2 A
Gain bandwidth product fT
— 15 — — 15 —
Turn on time
t on
— 0.3 — — 0.3 —
Turn off time
t off
— 3.0 — — 3.0 —
Storage time
t stg
— 2.5 — — 2.5 —
Note: 1. The 2SB566(K) and 2SB566A(K) are grouped by hFE1 as follows.
MHz
µs
µs
µs
VCE = –4 V, IC = –0.5 A
VCC = –10.5 V
IC = 10IB1 = –10IB2 =
–0.5 A
B
60 to 120
C
100 to 200
2
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