B1009 Просмотр технического описания (PDF) - SavantIC Semiconductor

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Компоненты Описание

производитель

B1009

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1009

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-2.0A; IB=-0.2A

VBEsat

Base-emitter saturation voltage

IC=-2.0A ;IB=-0.2A

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

hFE-2

DC current gain

VCB=-20V; IE=0

VEB=-3V; IC=0

IC=-20mA ; VCE=-5V

IC=-500mA ; VCE=-5V

fT

Transition frequency

IC=-500mA ; VCE=-5V

COB

Collector output capacitance

f=1MHz ; VCB=-10V

MIN TYP. MAX UNIT

-32

V

-0.8

V

-2.0

V

-1

µA

-1

µA

40

82

390

100

MHz

50

pF

2

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