2SA2069 Просмотр технического описания (PDF) - Toshiba

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2SA2069

TOSHIBA Transistor Silicon PNP Epitaxial Type

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Rise time

Switching time

Storage time

Fall time

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE (1)

hFE (2)

VCE (sat)

VBE (sat)

Cob

tr

tstg

tf

VCB = −20 V, IE = 0

VEB = −7 V, IC = 0

IC = −10 mA, IB = 0

VCE = −2 V, IC = −0.15 A

VCE = −2 V, IC = −0.5 A

IC = −0.5 A, IB = −17 mA

IC = −0.5 A, IB = −17 mA

VCB = −10 V, IE = 0, f = 1 MHz

See Figure 1.

VCC ≈ −10 V, RL = 20 Ω

−IB1 = IB2 = −17 mA

2SA2069

Min Typ. Max Unit

―

― −100 nA

―

― −100 nA

−20 ―

―

V

200

―

500

125 ―

―

―

― −0.14 V

―

― −1.10 V

―

12

―

pF

―

40

―

―

135

―

ns

―

37

―

20 μs

IB2

IB1

IB1

Input

IB2

Duty cycle < 1%

VCC

Output

Marking

4D

Lot No.

Part No. (or abbreviation code)

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

Figure 1 Switching Time Test Circuit &

Timing Chart

2

2006-11-09

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