2SA1757 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

2SA1757

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SA1757

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA , IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-50μA , IC=0

VCEsat-1 Collector-emitter saturation voltage IC=-3A, IB=-0.15A

VCEsat-2 Collector-emitter saturation voltage IC=-4A, IB=-0.2A

VBEsat-1 Base-emitter saturation voltage

IC=-3A, IB=-0.15A

VBEsat-2 Base-emitter saturation voltage

IC=-4A, IB=-0.2A

ICBO

Collector cut-off current

VCB=-100V, IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-2V

Cob

Output capacitance

IE=0 ; VCB=-10V,f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-3A ; RL=10Ω

IB1=- IB2=-0.15A

VCC≈-30V

MIN TYP. MAX UNIT

-60

V

-5

V

-0.3

V

-0.5

V

-1.2

V

-1.5

V

-10

μA

-10

μA

160

320

130

pF

80

MHz

0.3

μs

1.5

μs

0.3

μs

2

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