2SA1726 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

2SA1726

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE=∞

VCE(sat) Collector-emitter saturation voltage IC=-2A; IB=-0.2A

ICBO

Collector cut-off current

VCB=-80V ;IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-2A ; VCE=-4V

COB

Collertor output capacitance

f=1MHz; VCB=-10V

fT

Transition frequency

IE=0.5A ; VCE=-12V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

VCC=-30V; IC=-3A

IB1=-IB2=-0.3A

RL=10Ω

‹ hFE Classifications

O

P

Y

50-100 70-140 90-180

Product Specification

2SA1726

MIN TYP. MAX UNIT

-80

V

-0.5

V

-10 μA

-10 μA

50

150

pF

20

MHz

0.18

μs

1.10

μs

0.21

μs

2

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