2SA1117 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SA1117

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

ICBO

Collector cut-off current

VCB=-200V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-8A ; VCE=-4V

fT

Transition frequency

IC=-0.5A ; VCE=-12V

Product Specification

2SA1117

MIN TYP. MAX UNIT

-200

V

-6

V

-2.0

V

-0.1 mA

-0.1 mA

20

20

MHz

2

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