2N7002-215 Просмотр технического описания (PDF) - NXP Semiconductors.
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2N7002-215 Datasheet PDF : 13 Pages
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NXP Semiconductors
2N7002
60 V, 300 mA N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGSth
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer
capacitance
ton
turn-on time
toff
turn-off time
Source-drain diode
VSD
source-drain voltage
Qr
recovered charge
trr
reverse recovery time
Conditions
ID = 10 µA; VGS = 0 V; Tj = 25 °C
ID = 10 µA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VDS = VGS; Tj = 25 °C;
see Figure 9; see Figure 10
ID = 0.25 mA; VDS = VGS; Tj = 150 °C;
see Figure 9; see Figure 10
ID = 0.25 mA; VDS = VGS; Tj = -55 °C;
see Figure 9; see Figure 10
VDS = 48 V; VGS = 0 V; Tj = 25 °C
VDS = 48 V; VGS = 0 V; Tj = 150 °C
VGS = 15 V; VDS = 0 V; Tj = 25 °C
VGS = -15 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 500 mA; Tj = 25 °C;
see Figure 6; see Figure 8
VGS = 10 V; ID = 500 mA; Tj = 150 °C;
see Figure 6; see Figure 8
VGS = 4.5 V; ID = 75 mA; Tj = 25 °C; see
Figure 6; see Figure 8
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VGS = 10 V; VDS = 50 V; RL = 250 Ω;
RG(ext) = 50 Ω; RGS = 50 Ω
IS = 300 mA; VGS = 0 V; Tj = 25 °C; see
Figure 11
VGS = 0 V; IS = 300 mA;
dIS/dt = -100 A/µs
Min Typ Max Unit
60 -
55 -
1
2
-
V
-
V
2.5 V
0.6 -
-
V
-
-
2.75 V
-
0.01 1
µA
-
-
10 µA
-
10
100 nA
-
10
100 nA
-
2.8 5
Ω
-
-
9.25 Ω
-
3.8 5.3 Ω
-
31
50
pF
-
6.8 30 pF
-
3.5 10 pF
-
2.5 10 ns
-
11
15
ns
-
0.85 1.5 V
-
30
-
nC
-
30
-
ns
2N7002
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 7 — 8 September 2011
© NXP B.V. 2011. All rights reserved.
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