2N6108 Просмотр технического описания (PDF) - Inchange Semiconductor
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2N6108 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6106 2N6108 2N6110
DESCRIPTION
·With TO-220 package
·With short pin
APPLICATIONS
·Power amplifier and switching
circuits applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
半导体2N6106
固电 SEMICONDUCTOR VCBO
Collector-base voltage 2N6108
2N6110
2N6106
INCHANG VCEO
Collector-emitter voltage 2N6108
2N6110
CONDITIONS
Open emitter
Open base
VALUE
-40
-60
-80
-30
-50
-70
UNIT
V
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-7
A
ICM
Collector current-peak
-10
A
IB
Base current
-3
A
PT
Total power dissipation
TC=25℃
40
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
3.125
UNIT
℃/W
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