2N5656 Просмотр технического описания (PDF) - ON Semiconductor

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производитель

2N5656

0.5 AMPERE POWER TRANSISTORS NPN SILICON 250–350 VOLTS 20 WATTS

ON Semiconductor 

300

200

100

70

50

30

20

10

1.0

TJ = +150°C

+100°C

+25°C

-ā55°C

2.0

3.0

2N5655 2N5657

5.0 7.0 10

20

30

50 70 100

IC, COLLECTOR CURRENT (mA)

Figure 4. Current Gain

VCE = 10 V

VCE = 2.0 V

200 300

500

1.0

0.8

VBE(sat) @ IC/IB = 10

0.6

VBE @ VCE = 10 V

0.4

VCE(sat) @ IC/IB = 10

0.2

IC/IB = 5.0

TJ = +25°C

0

10

20 30

50

100

200 300 500

IC, COLLECTOR CURRENT (mA)

Figure 5. “On” Voltages

300

200

TJ = +25°C

Cib

100

70

50

30

20

Cob

10

0.1 0.2

0.5 1.0 2.0 5.0 10 20

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

50 100

10

5.0

2.0

1.0

0.5

0.2

td

0.1

0.05

0.02

0.01

1.0 2.0

tr

IC/IB = 10

VCC = 300 V, VBE(off) = 2.0 V

(2N5657, only)

VCC = 100 V, VBE(off) = 0 V

5.0 10 20

50 100 200 500

IC, COLLECTOR CURRENT (mA)

Figure 7. Turn–On Time

10

5.0

IC/IB = 10

2.0

ts

1.0

tf

0.5

VCC = 100 V

0.2

VCC = 300 V

(Type 2N5657, only)

0.1

1.0 2.0

5.0 10 20

50 100 200

500

IC, COLLECTOR CURRENT (mA)

Figure 8. Turn–Off Time

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