2N5581JX Просмотр технического описания (PDF) - Semicoa Semiconductor

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производитель

2N5581JX

Silicon NPN Transistor

Semicoa Semiconductor 

Description

Semicoa Semiconductors offers:

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N5581J)

• JANTX level (2N5581JX)

• JANTXV level (2N5581JV)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV

• Radiation testing (total dose) upon request

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

2N5581

Silicon NPN Transistor

Data Sheet

Applications

• General purpose switching

• Low power

• NPN silicon transistor

Features

• Hermetically sealed TO-46 metal can

• Also available in chip configuration

• Chip geometry 0400

• Reference document:

MIL-PRF-19500/423

Benefits

• Qualification Levels: JAN, JANTX, and

JANTXV

• Radiation testing available

Absolute Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Collector Current, Continuous

Power Dissipation, TA = 25°C

Derate linearly above 25°C

Power Dissipation, TC = 25°C

Derate linearly above 25°C

Operating Junction Temperature

Storage Temperature

Symbol

VCEO

VCBO

IC

PT

PT

TJ

TSTG

TC = 25°C unless otherwise specified

Rating

Unit

50

Volts

75

Volts

800

mA

500

2.86

2

11.43

-55 to+200

mW

mW/°C

W

mW/°C

°C

-55 to+200

°C

Copyright 2002

Rev. D

Semicoa Semiconductors, Inc.

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

www.SEMICOA.com

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