2N5400G Просмотр технического описания (PDF) - ON Semiconductor
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2N5400G Datasheet PDF : 6 Pages
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2N5400, 2N5401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N5400
2N5401
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
2N5400
2N5401
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
2N5400
2N5401
2N5400
2N5401
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5400
2N5401
(IC = 10 mAdc, VCE = 5.0 Vdc)
2N5400
2N5401
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N5400
2N5401
2N5400
2N5401
2N5400
2N5401
Symbol
Min
Max
Unit
V(BR)CEO
120
150
V(BR)CBO
130
160
V(BR)EBO
5.0
ICBO
−
−
−
−
IEBO
−
Vdc
−
−
Vdc
−
−
−
Vdc
100
nAdc
50
100
mAdc
50
50
nAdc
hFE
30
50
40
60
40
50
VCE(sat)
−
−
VBE(sat)
−
−
−
−
−
180
240
−
−
Vdc
0.2
0.5
Vdc
1.0
1.0
fT
Cobo
hfe
NF
MHz
100
400
100
300
−
6.0
pF
−
30
200
40
200
−
8.0
dB
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