1SS400G(2011) Просмотр технического описания (PDF) - ROHM Semiconductor

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Компоненты Описание

производитель

1SS400G
(Rev.:2011)

Switching Diode

ROHM Semiconductor 

1SS400G

20

18

1cyc

IFSM

16

14

8.3ms

12

10

8

AVE:3.9A

6

4

2

0

IFSM DISPERSION MAP

100

IFSM

8.3ms 8.3ms

1cyc.

10

　

Data Sheet

2

1.5

1

0.5

0

100

10

AVE:1.49ns

Ta=25°C

VR=6V

IF=10mA

RL=100Ω

n=10pcs

trr DISPERSION MAP

IFSM

time

1

1

10

100

NUMBER OF CYCLES

IFSM-CYCLE CHARACTERISTICS

30

25

20

15

10

AVE：6.48kV

5

AVE：1.60kV

0

C=200pF

C=100pF

R=0Ω

R=1.5kΩ

ESD DISPERSION MAP

1

1

1000

100

10

100

TIME:t(ms)

IFSM-t CHARACTERISTICS

Rth(j-a)

Rth(j-c)

10

0.001 0.01 0.1

1

10

100

TIME:t(s)

Rth-t CHARACTERISTICS

1000

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2011.10 - Rev.A

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