Philips Semiconductors
2 × 50 W class-D power amplifier
DC CHARACTERISTICS
VDD = ±25 V; Tamb = 25 °C; measured in Fig.5; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Supplies
VDD
Iq(tot)
Istb
supply voltage range
total quiescent current
standby current
Amplifier outputs
VOO
∆VOO
output offset voltage
delta output offset voltage
Mode select input; see Fig.4
Vms
Ims
Vth1+
Vth1−
Vms(hys1)
Vth2+
Vth2−
Vms(hys2)
input voltage range
input current
threshold voltage
threshold voltage
hysteresis (Vth1+) − (Vth1−)
threshold voltage
threshold voltage
hysteresis (Vth2+) − (Vth2−)
note 1
on and mute
on ↔ mute
note 2
Vms = 5.5 V
standby → mute; note 2
mute → standby; note 2
mute → on; note 2
on → mute; note 2
Notes
1. The circuit is DC adjusted at VDD = ±15 V to ±30 V.
2. Referenced to SGND (0 V).
Preliminary specification
TDA8920
MIN. TYP. MAX. UNIT
±15 ±25 ±30 V
−
50
60
mA
−
0.2 50
µA
−
−
50
mV
−
−
30
mV
0
−
5.5 V
−
−
tbf
µA
−
−
2
V
1
−
−
V
−
200 −
mV
−
−
4
V
3
−
−
V
−
200 −
mV
handbook, full pagewidth
on
mute
standby
Vms(hys1)
Vth1−
Vth1+
Vms(hys2)
Vth2−
Vth2+
Vms
MGR662
Fig.4 Mode select transfer characteristic.
1998 Dec 01
7