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18N60G

18A,600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

UNISONIC TECHNOLOGIES CO., LTD

18N60

18A,600V N-CHANNEL

POWER MOSFET

 DESCRIPTION

The UTC 18N60 uses UTC’s advanced proprietary, planar

stripe, DMOS technology to provide excellent RDS(ON), low gate

charge and operation with low gate voltages. This device is

suitable for use as a load switch or in PWM applications.

 FEATURES

* RDS(ON) ≤ 0.5Ω @ VGS=10V, ID=9A

* Ultra Low Gate Charge ( Typical 50nC )

* Low Reverse Transfer Capacitance ( CRSS = Typical 23pF )

* Fast Switching Capability

* Avalanche Energy Specified

* Improved dv/dt Capability, High Ruggedness

 SYMBOL

2.Drain

Power MOSFET

1.Gate

3.Source

 ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

18N60L-T3P-T

18N60G-T3P-T

18N60L-T47-T

18N60G-T47-T

Note: Pin Assignment: G: Gate D: Drain S: Source

Package

TO-3P

TO-247

Pin Assignment

1

2

3

GDS

GDS

Packing

Tube

Tube

 MARKING

www.unisonic.com.tw

Copyright © 2015 Unisonic Technologies Co., Ltd

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