11N90 Просмотр технического описания (PDF) - Unisonic Technologies

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11N90

11 Amps, 900 Volts N-CHANNEL POWER MOSFET

Unisonic Technologies 

11N90

Preliminary

Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS ID=250µA, VGS=0V

900

Breakdown Voltage Temperature

Coefficient

△BVDSS/△TJ ID=250µA, Referenced to 25°C

Drain-Source Leakage Current

IDSS

VDS=900V, VGS=0V

VDS=720V, TC=125°C

Forward

Gate- Source Leakage Current

Reverse

ON CHARACTERISTICS

IGSS

VGS=+30V, VDS=0V

VGS=-30V, VDS=0V

Gate Threshold Voltage

VGS(TH) VDS=VGS, ID=250µA

3.0

Static Drain-Source On-State Resistance

RDS(ON) VGS=10V, ID=5.5A

Forward Transconductance

DYNAMIC PARAMETERS

gFS

VDS=50V, ID=5.5A (Note 4)

Input Capacitance

Output Capacitance

CISS

COSS

VGS=0V, VDS=25V, f=1.0MHz

Reverse Transfer Capacitance

SWITCHING PARAMETERS

CRSS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

QG

QGS

VGS=10V, VDS=720V, ID=11.0A

(Note 4, 5)

QGD

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VDD=450V, ID=11.0A, RG=25Ω

(Note 4, 5)

Fall-Time

tF

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

Maximum Body-Diode Pulsed Current

(Note1)

ISM

Drain-Source Diode Forward Voltage

(Note 4)

VSD

IS=11A, VGS=0V

Body Diode Reverse Recovery Time

tRR

VGS=0V, IS=11.0A, dIF/dt=100A/µs

Body Diode Reverse Recovery Charge

QRR

(Note 4)

Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 37mH, IAS = 7.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 11.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

TYP

1.0

0.91

2530

215

23

60

13

25

60

130

130

85

1000

17.0

MAX UNIT

V

V/°C

10 µA

100

100 nA

-100 nA

5.0 V

1.1 Ω

S

3290 pF

280 pF

30 pF

80 nC

nC

nC

130 ns

270 ns

270 ns

180 ns

11 A

28.0 A

1.4 V

ns

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-497.a

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