11N90 Просмотр технического описания (PDF) - Unisonic Technologies

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11N90

11 Amps, 900 Volts N-CHANNEL POWER MOSFET

Unisonic Technologies 

11N90

Preliminary

„ ABSOLUTE MAXIMUM RATINGS(TC=25°C, unless otherwise specified)

Power MOSFET

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

900

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

Continuous

ID

Pulsed (Note 1)

IDM

11

A

28.0

A

Avalanche Energy

Single Pulsed (Note 2)

EAS

Repetitive (Note 1)

EAR

960

mJ

12

mJ

Peak Diode Recovery dv/dt (Note 3)

dv/dt

4.0

V/ns

Power Dissipation

TO-220

TO-220F1

160

W

PD

50

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL CHARACTERISTICS

Junction to Ambient

Junction to Case

PARAMETER

TO-220

TO-220F1

TO-220

TO-220F1

SYMBOL

θJA

θJC

RATINGS

62.5

62.5

0.78

2.48

UNIT

°C/W

°C/W

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-497.a

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