2SB1002 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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Компоненты Описание

производитель

2SB1002

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB1002

10,000

DC Current Transfer Ratio vs.

Collector Current

3,000

1,000

Pulse

VCE = –2 V

300

100

30

10

–1

–3 –10 –30 –100 –300 –1,000

Collector Current IC (mA)

3,000

1,000

300

100

Collector Output Capacitance

vs. Collector to Base Voltage

f = 1 MHz

IE = 0

30

10

3

–0.3 –1.0 –3 –10 –30 –100 –300

Collector to Base Voltage VCB (V)

Saturation Voltage vs. Collector Current

–1.0

VBE(sat)

–0.3

–0.1

–0.03

VCE(sat)

Pulse

IC = 10 IB

–0.01

–10

–30

–100 –300 –1,000

Collector Current IC (mA)

4

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