GB02N120 Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

GB02N120

Fast S-IGBT in NPT-technology

Infineon Technologies 

Preliminary

SGP02N120

SGB02N120, SGD02N120

2.0mJ

*) Eon and Ets include losses

due to diode recovery.

1.5mJ

1.0mJ

Ets*

Eon*

0.5mJ

Eoff

0.0mJ

0A

2A

4A

6A

8A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C, VCE = 800V,

VGE = +15V/0V, RG = 9 1Ω)

0.4mJ

*) Eon and Ets include losses

due to diode recovery.

Ets*

0.3mJ

Eon*

0.2mJ

0.1mJ

Eoff

0.0mJ

-50°C 0°C 50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 800V, VGE = +15V/0V,

IC = 2A, RG = 9 1 Ω)

0.5mJ

*) Eon and Ets include losses

due to diode recovery.

0.4mJ

Ets*

0.3mJ

Eon*

0.2mJ

0.1mJ

Eoff

0.0mJ

0Ω

50Ω

100Ω

150Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C, VCE = 800V,

VGE = +15V/0V, IC = 2A)

D=0.5

100K/W

0.2

0.1

0.05

10-1K/W

0.02

0.01

R,(K/W)

0.66735

0.70472

0.62778

τ, (s)

0.04691

0.00388

0.00041

R1

R2

10-2K/W

single pulse C1=τ1/ R1 C2=τ2/R2

1µs 10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = tp / T)

Power Semiconductors

7

Mar-00

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