GB02N120 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

GB02N120

Fast S-IGBT in NPT-technology

Infineon Technologies 

Preliminary

SGP02N120

SGB02N120, SGD02N120

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Thermal resistance,

junction – ambient

SMD version, device on PCB1)

Symbol

Conditions

RthJC

RthJA

RthJA

TO-220AB

TO-263AB(D2PAK)

Max. Value

Unit

2.0

K/W

62

40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

Dynamic Characteristic

V(BR)CES

VCE(sat)

VGE(th)

ICES

IGES

gfs

VGE=0V, IC=100µA

VGE = 15V, IC=2A

Tj=25°C

Tj=150°C

IC=100µA,VCE=VGE

VCE=1200V,VGE=0V

Tj=25°C

Tj=150°C

VCE=1200V,VGE=0V

VCE=20V, IC=2A

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

Ciss

Coss

Crss

QGate

Internal emitter inductance

measured 5mm (0.197 in.) from case

Short circuit collector current2)

LE

IC(SC)

VCE=25V,

VGE=0V,

f=1MHz

VCC=960V, IC=2A

VGE=15V

TO-220AB

VGE=15V,tSC≤10µs

100V≤VCC≤1200V,

Tj ≤ 150°C

min.

1200

2.5

-

3

-

-

-

-

-

-

-

-

-

Value

Unit

typ. max.

-

-V

3.1

3.6

3.7

4.3

4

5

µA

-

25

-

100

-

100 nA

1.5

-S

205

250 pF

28

34

17

21

11

- nC

7

- nH

24

-A

1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for

collector connection. PCB is vertical without blown air.

2) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

2

Mar-00

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