2N7002P Просмотр технического описания (PDF) - NXP Semiconductors.

Номер в каталоге

Компоненты Описание

производитель

2N7002P

60 V, 360 mA N-channel Trench MOSFET

NXP Semiconductors. 

2N7002P

60 V, 0.3 A N-channel Trench MOSFET

Rev. 01 — 19 April 2010

Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

„ Logic-level compatible

„ Very fast switching

„ Trench MOSFET technology

„ AEC-Q101 qualified

1.3 Applications

„ Relay driver

„ High-speed line driver

„ Low-side loadswitch

„ Switching circuits

1.4 Quick reference data

Table 1.

Symbol

VDS

VGS

ID

Quick reference data

Parameter

drain-source voltage

gate-source voltage

drain current

RDSon

drain-source on-state

resistance

Conditions

25 °C ≤ Tj ≤ 150 °C

Tamb = 25 °C;

VGS = 10 V

Tj = 25 °C;

VGS = 10 V;

ID = 500 mA

Min Typ Max Unit

-

-

60

V

-

-

±20 V

-

-

300 mA

-

1

1.6 Ω

Share Link: