P20NF06(2004) Просмотр технического описания (PDF) - STMicroelectronics
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производитель
P20NF06
(Rev.:2004)
(Rev.:2004)
STMicroelectronics
P20NF06 Datasheet PDF : 10 Pages
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STP20NF06
STF20NF06
N-CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
STP20NF06
STF20NF06
60 V
60 V
< 0.07 Ω
< 0.07 Ω
20 A
20 A(*)
■ TYPICAL RDS(on) = 0.06 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ 175oC OPERATING TEMPERATURE
■ HIGH dv/dt CAPABILITY
■ APPLICATION ORIENTED
CHARACTERIZATION
Figure 1:Package
3
2
1
TO-220
3
2
1
TO-220FP
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
Table 2: Order Codes
Part Number
STP20NF06
STF20NF06
MARKING
P20NF06
F20NF06
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(*)Refer to soa for the max allowable current value on FP-type due
to Rth value
December 2004
STP20NF06
20
14
80
60
0.4
Value
60
60
± 20
9
120
STF20NF06
20(*)
14(*)
80(*)
28
0.18
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤20A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 10A, VDD= 30V
Rev. 1
1/10
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