M63828DP Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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M63828DP Datasheet PDF : 6 Pages
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63828WP/DP
Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63828WP and M63828DP are seven-circuit Darlington
transistor arrays with clamping diodes. The circuits are made
of NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
Two package configurations (WP/DP)
High breakdown voltage (BVCEO ≥ 50V)
High-current driving (Ic(max) = 500mA)
With clamping diodes
Driving available with TTL, PMOS IC output
Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M63828WP and M63828DP each have seven circuits
consisting of NPN Darlington transistors. These ICs have re-
sistance of 10.5kΩ between input transistor bases and input
pins. A spike-killer clamping diode is provided between each
output pin (collector) and COM pin (pin 9). The output tran-
sistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.
PIN CONFIGURATION
IN1→
1
IN2→
2
IN3→
3
INPUT
IN4→
4
IN5→
5
IN6→
6
IN7→ 7
GND 8
16
→O1
15
→O2
14
→O3
13
→O4
OUTPUT
12
→O5
11
→O6
10 →O7
9 COM COMMON
16P4X-A(WP)
Package type 16P2X-B(DP)
CIRCUIT DIAGRAM
INPUT
10.5K
COM
OUTPUT
7.2K
3K
GND
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
Unit
–0.5 ~ +50
V
500
mA
–0.5 ~ +30
V
500
mA
50
V
1.47(WP)/1.00(DP)
W
–40 ~ +85
°C
–55 ~ +125
°C
Feb. 2003
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