IRFP450N Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

IRFP450N

Power MOSFET

Vishay Semiconductors 

IRFP450N, SiHFP450N

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

VGS

100

TOP 15V

12V

10V

8.0V

7.5V

7.0V

6.5V

BOTTOM 6.0V

10

10

TJ = 150° C

1

6.0V

0.1

0.1

20μs PULSE WIDTH

TJ= 25 °C

1

10

10

VDS , Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

100

VGS

TOP 15V

12V

10V

8.0V

7.5V

7.0V

6.5V

BOTTOM 6.0V

10

6.0V

20μs PULSE WIDTH

TJ= 150 °C

1

1

10

10

VDS , Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

TJ = 25° C

1

V DS= 50V

20μs PULSE WIDTH

0.1

6.0

7.0

8.0

9.0

10.0

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3.0 ID = 14A

2.5

2.0

1.5

1.0

0.5

VGS = 10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature ( °C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91232

S-Pending-Rev. b, 26-Jun-08

www.vishay.com

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