FDP2670 Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FDP2670 Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = 10A
8
6
4
VDS = 50V
75V
100V
2
0
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
10us
100us
1ms
10ms
100ms
DC
1
VGS = 10V
SINGLE PULSE
RθJC = 1.6oC/W
TC = 25oC
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
2000
1500
CISS
f = 1MHz
VGS = 0 V
1000
500
CRSS
COSS
0
0
25
50
75 100 125 150 175 200
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
2000
1500
SINGLE PULSE
RθJC = 1.6°C/W
TC = 25°C
1000
500
0
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
RθJC(t) = r(t) * RθJC
RθJC = 1.6 °C/W
SINGLE PULSE
P(pk)
t1
t2
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDP2670/FDB2670 Rev C1(W)
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