2SC867 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SC867

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC867

CHARACTERISTICS

Tj=25? unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=1A; IB=0.2 A

VBEsat Base-emitter saturation voltage

IC=1A; IB=0.2 A

ICBO

Collector cut-off current

VCB=400V;IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=0.1A ; VCE=3V

fT

Transition frequency

IC=0.2A ; VCE=10V

MIN TYP. MAX UNIT

150

V

5

V

1.0

V

1.5

V

100 µA

100 µA

50

8

MHz

2

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