2SC2462 Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание

производитель

2SC2462

Silicon NPN Epitaxial

Renesas Electronics 

2SC2462

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

50

Collector to emitter breakdown voltage V(BR)CEO

40

Emitter to base breakdown voltage

V(BR)EBO

5

Collector cutoff current

ICBO

—

Emitter cutoff current

DC current transfer ratio

IEBO

—

hFE*1

100

Collector to emitter saturation voltage

VCE(sat)

—

Base to emitter voltage

VBE

—

Note: 1. The 2SC2462 is grouped by hFE as follows.

Grade

B

C

D

—

—

V IC = 10 µA, IE = 0

—

—

V IC = 1 mA, RBE = ∞

—

—

V IE = 10 µA, IC = 0

—

0.5

µA VCB = 30 V, IE = 0

—

0.5

µA VEB = 2 V, IC = 0

—

500

VCE = 12 V, IC = 2 mA

—

0.2

V IC = 10 mA, IB = 1 mA

—

0.75

V VCE = 12 V, IC = 2 mA

Mark

LB

LC

LD

hFE

100 to 200 160 to 320 250 to 500

Rev.2.00 Aug 10, 2005 page 2 of 6

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