µPC4061
ELECTRICAL CHARACTERISTICS (TA = 25 °C, V± = ±15 V)
Parameter
Input Offset Voltage
Input Offset Current Note 7
Input Bias Current Note 7
Large Signal Voltage Gain
Supply Current
Common Mode Rejection Ratio
Supply Voltage Rejection Ratio
Output Voltage Swing
Symbol
Conditions
VIO
RS ≤ 50 Ω
IIO
IB
AV
RL ≥ 10 kΩ , VO = ±10 V
ICC
IO = 0 A
CMR
SVR
Vom
RL ≥ 10 kΩ
MIN.
3000
70
70
±12
Common Model Input Voltage Range
VICM
±12
Slew Rate
Unity Gain Frequency
Input Equivalent Noise Voltage Density
Input Offset Voltage
Average VIO Temperature Drift
Input Offset CurrentNote 7
Input Bias CurrentNote 7
SR
funity
en
VIO
∆VIO/∆T
IIO
IB
AV = 1
RS = 100 Ω, f = 1 kHz
RS ≤ 50 Ω, TA = –20 to +70 °C
TA = –20 to +70 °C
TA = –20 to +70 °C
TA = –20 to +70 °C
TYP.
±2
±5
10
9000
220
90
90
+14.0
–13.6
+15
–13
3
1
30
±10
MAX.
Unit
±10
mV
±50
pA
100
pA
250
µA
dB
dB
V
V
V/µs
MHz
nV/√Hz
±15
mV
µV/°C
±2
nA
3.5
nA
Notes 7. Input bias currents flow into IC. Because each currents are gate leak current of P-channel J-FET on input
stage. And that are temperature sensitive. Short time measuring method is recommendable to maintain the
junction temperature close to the operating ambient temperature.
Data Sheet G15038EJ3V0DS00
3