UN1066(2008) Просмотр технического описания (PDF) - Unisonic Technologies

Номер в каталоге

Компоненты Описание

производитель

UN1066
(Rev.:2008)

HIGH SPEED SWITCHING TRANSISTOR

Unisonic Technologies 

UN1066

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (Ta=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-to-Base Voltage

BVCBO

20

V

Collector-to-Emitter Voltage

BVCEO

15

V

Emitter-to-Base Voltage

BVEBO

5

V

Collector Current

IC

6

A

Collector Current (Pulse)

ICP

9

A

Base Current

Collector Dissipation(TC=25℃)

Junction Temperature

Storage Temperature

IB

600

mA

PC

3.5

W

TJ

150

℃

TSTG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25℃)

PARAMETER

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector-to-Emitter Saturation Voltage

Base-to-Emitter Saturation Voltage

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

Turn-on Time

Storage Time

Fall Time

SYMBOL

TEST CONDITIONS

BVCBO IC=10μ A, IE=0

BVCEO IC=1mA, RBE=∞

BVEBO IE=10μA, IC=0

VCE(SAT)

IC=1.5A, IB=30mA

IC=3A, IB=60mA

VBE(SAT) IC=1.5A, IB=30mA

ICBO VCB=12V, IE=0

IEBO VEB=4V, IC=0

hFE VCE=0.5V, IC=5A

fT VCE=2V, IC=500mA

Cob VCB=10V, f=1MHz

tON Refer to Test Circuit

tSTG Refer to Test Circuit

tF Refer to Test Circuit

MIN TYP MAX UNIT

20

V

15

V

6

V

180 mV

300 mV

1.2

V

0.1 µA

0.1 µA

250

100

MHz

50 pF

50

ns

250 ns

25

ns

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R209-023,C

Share Link: