Philips Semiconductors
AM receiver circuit
PARAMETER
Oscillator
Frequency range
Oscillator amplitude (pins 11 to 12)
External load impedance
External load impedance for no oscillation
Ripple rejection at VP(rms) = 100 mV;
fP = 100 Hz
(RR = 20 log [V13-16/V11-16])
Source voltage for switching diodes (6 × VBE)
D.C. output current (for switching diodes)
Change of output voltage at
∆I11 = 20 mA (switch to maximum load)
Buffered oscillator output
D.C. output voltage
Output signal amplitude
Output impedance
Output current
I.F., a.g.c. and a.f. stages
D.C. input voltage
I.F. input impedance
I.F. input voltage for
THD = 3% at m = 80%
Voltage gain before start of a.g.c.
A.G.C. range of i.f. stages: change of
V3-4 for 1 dB change of Vo(af);
V3-4(ref) = 75 mV
A.F. output voltage at V3-4(if) = 50 µV
A.F. output voltage at V3-4(if) = 1 mV
A.F. output impedance (pin 6)
Indicator driver
Output voltage at Vi = 0 mV;
RL(9) = 2,7 kΩ
Output voltage at Vi = 500 mV;
RL(9) = 2,7 kΩ
Load resistance
Product specification
TDA1072A
SYMBOL
fosc
V11-12
R12-11(ext)
R12-11(ext)
MIN. TYP. MAX. UNIT
0,6
−
60 MHz
−
130 150 mV
0,5
−
200
kΩ
−
−
60
Ω
RR
V11-16
−I11
∆V11-16
V10-16
V10-16(p-p)
R10
−I10(peak)
V3-16, V4-16
R3-4
C3-4
V3-4
V3-4/V6-16
−
55
−
dB
−
4,2
−
V
0
−
20
mA
−
0,5
−
V
−
0,7
−
V
−
320
−
mV
−
170
−
Ω
−
−
3
mA
−
2,0
−
V
2,4
3
3,9
kΩ
−
7
−
pF
−
90
−
mV
−
68
−
dB
∆V3-4
Vo(af)
Vo(af)
Zo
−
55
−
dB
−
130
−
mV
−
310
−
mV
−
3,5
−
kΩ
V9-16
V9-16
RL(9)
−
20 150 mV
2,5
2,8
3,1
V
1,5
−
−
kΩ
May 1984
6