S20S30 Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

S20S30

Silicon Carbide Schottky Diode

Infineon Technologies 

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - case (per leg)

SMD version, device on PCB:

@ min. footprint

P-TO263-3-2: @ 6 cm2 cooling area 1)

SDP20S30

SDB20S30

Symbol

Values

Unit

min. typ. max.

RthJC

RthJA

-

-

2.3 K/W

-

-

62

-

35

-

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified (per leg)

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Diode forward voltage

IF=10A, Tj=25°C

IF=10A, Tj=150°C

VF

V

-

1.5 1.7

-

1.5 1.9

Reverse current

VR=300V, Tj=25°C

VR=300V, Tj=150°C

IR

µA

-

15 200

-

20 1000

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Rev. 1.1

Page 2

2004-04-05

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