1N5263B Просмотр технического описания (PDF) - Philips Electronics
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Компоненты Описание
производитель
1N5263B Datasheet PDF : 7 Pages
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Per type
Tj = 25 °C; unless otherwise specified.
TYPE No.
WORKING
VOLTAGE
VZ (V)(1)
at IZtest
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZtest
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
NOM.
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
MAX.
1 600
1 600
1 700
1 900
2 000
1 900
1 600
1 600
1 600
1 000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
TEMP. COEFF.
SZ (%/K)
at IZ(2)
MAX.
−0.075
−0.070
−0.065
−0.060
±0.055
±0.030
±0.030
+0.038
+0.038
+0.045
+0.050
+0.058
+0.062
+0.065
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.082
+0.083
+0.084
+0.085
+0.086
+0.086
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V
MAX.
20
450
20
450
20
450
20
450
20
450
20
450
20
300
20
300
20
300
20
200
20
200
20
150
20
150
20
150
20
150
20
90
20
85
20
85
9.5
80
9.0
80
8.5
75
7.8
75
7.4
75
7.0
70
6.6
70
6.2
60
REVERSE CURRENT
at REVERSE
VOLTAGE
IR (µA)
VR
MAX.
(V)
50
1.0
25
1.0
15
1.0
10
1.0
5
1.0
5
1.5
5
2.0
5
3.0
5
3.5
5
4.0
3
5.0
3
6.0
3
6.5
3
6.5
3
7.0
3
8.0
2
8.4
1
9.1
0.5
9.9
0.1
10.0
0.1
11.0
0.1
12.0
0.1
13.0
0.1
14.0
0.1
14.0
0.1
15.0
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
tp = 100 µs; Tamb = 25 °C
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.5
3.0
3.0
2.5
2.5
2.5
2.0
2.0
1.5
1.5
1.5
1.5
1.5
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