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CY7C1318BV18-167BZC Просмотр технического описания (PDF) - Cypress Semiconductor

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производитель
CY7C1318BV18-167BZC
Cypress
Cypress Semiconductor 
CY7C1318BV18-167BZC Datasheet PDF : 28 Pages
First Prev 21 22 23 24 25 26 27 28
CY7C1316BV18
CY7C1916BV18
CY7C1318BV18
CY7C1320BV18
Document History Page
Document Title: CY7C1316BV18/CY7C1916BV18/CY7C1318BV18/CY7C1320BV18 18-Mbit DDR-II SRAM 2-Word
Burst Architecture
Document Number: 38-05621
Orig. of
REV. ECN No. Issue Date Change
Description of Change
**
252474 See ECN
SYT New data sheet
*A 325581 See ECN SYT Removed CY7C1916BV18 from the title
Included 300-MHz Speed Bin
Added Industrial Temperature Grade
Replaced TBDs for IDD and ISB1 specs
Replaced the TBDs on the Thermal Characteristics Table to ΘJA = 28.51°C/W
and ΘJC = 5.91°C/W
Replaced TBDs in the Capacitance Table for the 165 FBGA Package
Changed the package diagram from BB165E (15 x 17 x 1.4 mm) to BB165D
(13 x 15 x 1.4 mm)
Added Lead-Free Product Information
Updated the Ordering Information by Shading and Unshading MPNs as per avail-
ability
*B 413997 See ECN NXR Converted from Preliminary to Final
Added CY7C1916BV18 part number to the title
Added 278-MHz speed Bin
Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901
North First Street” to “198 Champion Court”
Changed C/C Pin Description in the features section and Pin Description
Added power-up sequence details and waveforms
Added foot notes #15, 16, 17 on page# 19
Replaced Three-state with Tri-state
Changed the description of IX from Input Load Current to Input Leakage Current
on page# 20
Modified the IDD and ISB values
Modified test condition in Footnote #18 on page# 20 from VDDQ < VDD to
VDDQ < VDD
Replaced Package Name column with Package Diagram in the Ordering
Information table
Updated Ordering Information Table
*C 472384 See ECN NXR Modified the ZQ Definition from Alternately, this pin can be connected directly to
VDD to Alternately, this pin can be connected directly to VDDQ
Included Maximum Ratings for Supply Voltage on VDDQ Relative to GND
Changed the Maximum Ratings for DC Input Voltage from VDDQ to VDD
Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS, tTMSH, tTDIH,
tCH from 10 ns to 5 ns and changed tTDOV from 20 ns to 10 ns in TAP AC Switching
Characteristics table
Modified Power-Up waveform
Changed the Maximum rating of Ambient Temperature with Power Applied from
–10°C to +85°C to –55°C to +125°C
Added additional notes in the AC parameter section
Modified AC Switching Waveform
Corrected the typo In the AC Switching Characteristics Table
Updated the Ordering Information Table
Document Number: 38-05621 Rev. *C
Page 28 of 28
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