BYV26A(2005) Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

BYV26A
(Rev.:2005)

Ultra-Fast Avalanche Sinterglass Diode

Vishay Semiconductors 

BYV26

Vishay Semiconductors

1.2

1.0

RthJA = 45 K/W

0.8

0.6

0.4

RthJA = 100 K/W

0.2

0

0

95 9730

40

80 120 160 200

Tamb - Ambient Temperature ( °C )

Figure 3. Max. Average Forward Current vs. Ambient Temperature

40

35

30

25

20

15

10

5

0

0.1

16380

f = 1 MHz

BYV26C

1

10

100

VR - Reverse Voltage ( V )

Figure 5. Diode Capacitance vs. Reverse Voltage

10

Tj =175°C

1

Tj = 25°C

0.1

0.01

0.001

0 1 2 3 5 6 67

95 9731

VF - Forward Voltage ( V )

Figure 4. Max. Forward Current vs. Forward Voltage

40

35

30

25

20

15

10

5

0

0.1

16381

f = 1 MHz

BYV26E

1

10

100

VR - Reverse Voltage ( V )

Figure 6. Diode Capacitance vs. Reverse Voltage

Package Dimensions in mm (Inches)

Sintered Glass Case

SOD-57

Cathode Identification

3.6 (0.140)max.

ISO Method E

94 9538

0.82 (0.032) max.

26(1.014) min.

4.0 (0.156) max.

26(1.014) min.

Document Number 86040

Rev. 1.6, 14-Apr-05

www.vishay.com

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