BSR12 Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание

производитель

BSR12

PNP switching transistor

NXP Semiconductors. 

Philips Semiconductors

PNP switching transistor

Product specification

BSR12

FEATURES

• Low current (max. 100 mA)

• Low voltage (max. 15 V).

handbook, halfpage

3

3

APPLICATIONS

• High-speed, saturated switching applications for

industrial service in thick and thin-film circuits.

DESCRIPTION

PNP switching transistor in a SOT23 plastic package.

PINNING

PIN

1

2

3

base

emitter

collector

DESCRIPTION

1

Top view

1

2

2

MAM256

Fig.1 Simplified outline (SOT23) and symbol.

MARKING

TYPE NUMBER

BSR12

MARKING CODE

B5p

QUICK REFERENCE DATA

SYMBOL

VCBO

VCEO

ICM

Ptot

Tj

hFE

PARAMETER

collector-base voltage

collector-emitter voltage

peak collector current

total power dissipation

junction temperature

DC current gain

fT

transition frequency

toff

turn-off time

CONDITIONS

MIN.

open emitter

−

open base

−

−

Tamb ≤ 25 °C

−

−

IC = −10 mA; VCE = −1 V

30

IC = −50 mA; VCE = −1 V

30

f = 500 MHz; IC = −50 mA; VCE = −10 V 1.5

ICon = −30 mA; IBon = −3 mA; IBoff = 3mA −

MAX.

−15

−15

−200

250

150

−

120

−

30

UNIT

V

V

mA

mW

°C

GHz

ns

1999 Jul 23

2

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