DGT409BCA(2002) Просмотр технического описания (PDF) - Dynex Semiconductor

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Компоненты Описание

производитель

DGT409BCA
(Rev.:2002)

Reverse Blocking Gate Turn-off Thyristor

Dynex Semiconductor 

DGT409BCA

IT

QS

VR

IRR

15µs

CURVES

Fig.3 Reverse recovery waveforms

2.0

4.0

1.8

IGT

3.6

1.6

3.2

1.4

2.8

1.2

2.4

1.0

2.0

0.8

1.4

VGT

0.6

1.2

0.4

0.8

0.2

0.4

0

–50 –25

0

0 25 50 75 100 125 150

Junction temperature, Tj - (˚C)

Fig.4 Maximum gate trigger voltage/current vs junction

temperature

1000

900

800

700

Tj = 25˚C

600

500

Tj = 115˚C

400

300

200

100

0

01 2 3 4 5 6 78

Instantaneous on-state voltage, VT - (V)

Fig.5 Maximum on-state characteristics

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