Philips Semiconductors
Single 2-input OR gate
Product specification
74LVC1G32
DC CHARACTERISTICS
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
TEST CONDITIONS
OTHER
VCC (V)
MIN.
TYP.(1)
Tamb = −40 °C to +85 °C
VIH
HIGH-level input voltage
1.65 to 1.95 0.65 × VCC −
2.3 to 2.7 1.7
−
2.7 to 3.6 2.0
−
VIL
LOW-level input voltage
4.5 to 5.5 0.7 × VCC −
1.65 to 1.95 −
−
2.3 to 2.7 −
−
2.7 to 3.6 −
−
4.5 to 5.5 −
−
VOL
LOW-level output voltage VI = VIH or VIL
IO = 100 µA
1.65 to 5.5 −
−
IO = 4 mA
1.65
−
−
IO = 8 mA
2.3
−
−
IO = 12 mA
2.7
−
−
IO = 24 mA
3.0
−
−
IO = 32 mA
4.5
−
−
VOH
HIGH-level output
voltage
VI = VIH or VIL
IO = −100 µA
1.65 to 5.5 VCC − 0.1 −
IO = −4 mA
1.65
1.2
−
IO = −8 mA
2.3
1.9
−
IO = −12 mA 2.7
2.2
−
IO = −24 mA 3.0
2.3
−
IO = −32 mA 4.5
3.8
−
ILI
input leakage current
VI = 5.5 V or GND 5.5
−
±0.1
Ioff
power OFF leakage
VI or VO = 5.5 V 0
current
−
±0.1
ICC
quiescent supply current VI = VCC or GND; 5.5
−
0.1
IO = 0 A
∆ICC
additional quiescent
VI = VCC − 0.6 V; 2.3 to 5.5 −
5
supply current per pin IO = 0 A
MAX. UNIT
−
V
−
V
−
V
−
V
0.35 × VCC V
0.7
V
0.8
V
0.3 × VCC V
0.1
V
0.45
V
0.3
V
0.4
V
0.55
V
0.55
V
−
V
−
V
−
V
−
V
−
V
−
V
±5
µA
±10
µA
10
µA
500
µA
2004 Sep 15
6