STD20N06 Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

STD20N06

N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

STMicroelectronics 

Fig. 3: Switching Times Test Circuits For

Resistive Load

STD20N06

Fig. 4: Gate Charge Test Circuit

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

7/10

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