BUZ104SL-4 Просмотр технического описания (PDF) - Infineon Technologies

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производитель

BUZ104SL-4

SIPMOS ® Power Transistor

Infineon Technologies 

Preliminary data

BUZ 104SL-4

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 3.2 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 5 V, ID = 3.2 A

RG = 16.8 Ω

Rise time

VDD = 30 V, VGS = 5 V, ID = 3.2 A

RG = 16.8 Ω

Turn-off delay time

VDD = 30 V, VGS = 5 V, ID = 3.2 A

RG = 16.8 Ω

Fall time

VDD = 30 V, VGS = 5 V, ID = 3.2 A

RG = 16.8 Ω

Gate charge at threshold

VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V

Gate charge at 5.0 V

VDD = 40 V, ID = 3.2 A, VGS =0 to 5 V

Gate charge total

VDD = 40 V, ID = 3.2 A, VGS =0 to 10 V

Gate plateau voltage

VDD = 40 V, ID = 3.2 A

gfs

3

Ciss

-

Coss

-

Crss

-

td(on)

-

tr

-

td(off)

-

tf

-

Qg(th)

-

Qg(5)

-

Qg(total)

-

V(plateau)

-

Semiconductor Group

3

S

-

-

pF

320

400

100

125

55

70

ns

20

30

30

45

35

53

20

30

nC

0.55

0.85

5.3

8

14

21

V

3.27 -

07/Oct/1997

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