NTE478 Просмотр технического описания (PDF) - NTE Electronics

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NTE478

Silicon NPN Transistor RF Power Output, PO = 100W @ 175MHz

NTE Electronics 

Electrical Characteristic (Cont’d): (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Static

Output Power

Power Gain

Impedance

Output Capacitance

PO VCE = 12.5V, f = 175MHz

PG VCE = 12.5V, f = 175MHz

Zs VCE = 12.5V, Pi = 20W, f = 175MHz

Zcl

Cob VCB = 12V, IE = 0, f = 1MHz

100

–

–W

6

7

– dB

– 1.5– j0.9 –

Ω

– 0.5– j0.1 –

Ω

–

354

– pF

.405

(10.3)

Min

.205 (5.18)

E

B

.215 (5.48)

.122 (3.1) Dia

.500 (12.7) Dia

.005 (0.15)

C

E

.155 (3.94)

.160 (4.06)

.725 (18.43)

.975 (24.78)

.270

(6.85)

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